N-CHANNEL MOSFET transistor featuring 200V drain-to-source breakdown voltage and 18A continuous drain current. Boasts a low 105mOhm drain-to-source resistance and 1.2nF input capacitance. Designed for through-hole mounting in a TO-262 package, operating from -55°C to 175°C with 100W maximum power dissipation. Includes fast switching characteristics with turn-on delay of 7.8ns and fall time of 6.3ns.
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power100W
Quick Jump:
Technical Specifications
International Rectifier IRFSL4020PBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
105mR
Drain to Source Voltage (Vdss)
200V
Fall Time
6.3ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.2nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
100W
Radiation Hardening
No
Rds On Max
105mR
RoHS Compliant
Yes
Turn-Off Delay Time
16ns
Turn-On Delay Time
7.8ns
Width
15.01mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFSL4020PBF Datasheet
Download the complete datasheet for International Rectifier IRFSL4020PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
