N-CHANNEL MOSFET transistor featuring 200V drain-to-source breakdown voltage and 18A continuous drain current. Boasts a low 105mOhm drain-to-source resistance and 1.2nF input capacitance. Designed for through-hole mounting in a TO-262 package, operating from -55°C to 175°C with 100W maximum power dissipation. Includes fast switching characteristics with turn-on delay of 7.8ns and fall time of 6.3ns.
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power100W
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Technical Specifications
International Rectifier IRFSL4020PBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 105mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 6.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.2nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Rds On Max | 105mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7.8ns |
| Width | 15.01mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFSL4020PBF Datasheet
Download the complete datasheet for International Rectifier IRFSL4020PBF to view detailed technical specifications.
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