N-Channel Power MOSFET featuring 55V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 75mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-251-3 IPAK package, it operates within a -55°C to 175°C temperature range and supports a gate-to-source voltage of up to 20V. RoHS compliant and lead-free, this component boasts a maximum power dissipation of 45W.
PackageTO-251-3
Current Rating17A
MountingThrough Hole
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Technical Specifications
International Rectifier IRFU024NPBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
17A
Current Rating
17A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
75mR
Dual Supply Voltage
55V
Gate to Source Voltage (Vgs)
20V
Height
6.22mm
Input Capacitance
370pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
75
Packaging
Rail/Tube
Rds On Max
75mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
Through Hole
Turn-Off Delay Time
19ns
Turn-On Delay Time
4.9ns
DC Rated Voltage
55V
Width
2.39mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFU024NPBF Datasheet
Download the complete datasheet for International Rectifier IRFU024NPBF to view detailed technical specifications.
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