N-Channel Power MOSFET featuring 55V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 75mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-251-3 IPAK package, it operates within a -55°C to 175°C temperature range and supports a gate-to-source voltage of up to 20V. RoHS compliant and lead-free, this component boasts a maximum power dissipation of 45W.
PackageTO-251-3
Current Rating17A
MountingThrough Hole
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Technical Specifications
International Rectifier IRFU024NPBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 75mR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 370pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Rds On Max | 75mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | Through Hole |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 4.9ns |
| DC Rated Voltage | 55V |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFU024NPBF Datasheet
Download the complete datasheet for International Rectifier IRFU024NPBF to view detailed technical specifications.
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