N-Channel Power MOSFET featuring 55V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 75mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-251-3 IPAK package, it operates within a -55°C to 175°C temperature range and supports a gate-to-source voltage of up to 20V. RoHS compliant and lead-free, this component boasts a maximum power dissipation of 45W.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the International Rectifier IRFU024NPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRFU024NPBF technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 75mR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 370pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Rds On Max | 75mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | Through Hole |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 4.9ns |
| DC Rated Voltage | 55V |
| Width | 2.39mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFU024NPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
