International Rectifier
IRFU1205PBF
Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
PackageTO-251-3
Current Rating44A
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier IRFU1205PBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 44A |
| Current Rating | 44A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 27mR |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 27mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 7.3ns |
| DC Rated Voltage | 55V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFU1205PBF Datasheet
Download the complete datasheet for International Rectifier IRFU1205PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
