IRFU3711ZPBF

N-Channel Power MOSFET, featuring a 20V Drain-to-Source Voltage (Vdss) and a low 5.7mΩ Rds On (Max). This silicon, metal-oxide semiconductor FET offers a continuous drain current of 93A and a maximum power dissipation of 79W. Designed for through-hole mounting in a TO-251-3 (IPAK) package, it operates within a temperature range of -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 12ns turn-on delay and a 5.2ns fall time.