
N-Channel Power MOSFET, featuring a 20V Drain-to-Source Voltage (Vdss) and a low 5.7mΩ Rds On (Max). This silicon, metal-oxide semiconductor FET offers a continuous drain current of 93A and a maximum power dissipation of 79W. Designed for through-hole mounting in a TO-251-3 (IPAK) package, it operates within a temperature range of -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 12ns turn-on delay and a 5.2ns fall time.
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International Rectifier IRFU3711ZPBF technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 93A |
| Current Rating | 93A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 7.8mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 5.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.1mm |
| Input Capacitance | 2.16nF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 79W |
| Radiation Hardening | No |
| Rds On Max | 5.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 20V |
| Width | 2.3mm |
| RoHS | Compliant |
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