N-Channel Power MOSFET, TO-251-3 package, featuring 60V drain-source breakdown voltage and a maximum continuous drain current of 43A. Offers a low 15.8mΩ drain-source on-resistance and 71W power dissipation. Designed for through-hole mounting with a maximum operating temperature of 175°C. Includes fast switching characteristics with a 6.3ns turn-on delay and 47ns fall time.
International Rectifier IRFU3806PBF technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 43A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 15.8MR |
| Fall Time | 47ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 1.15nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 71W |
| Radiation Hardening | No |
| Rds On Max | 15.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 6.3ns |
| Width | 2.39mm |
| RoHS | Compliant |
No datasheet is available for this part.
