N-Channel Power MOSFET, 100V Vds, 16A continuous drain current, and 0.115 ohm maximum drain-source on-resistance. Features a TO-251 package for through-hole mounting, operating temperature range of -55°C to 175°C, and 79W maximum power dissipation. Includes 640pF input capacitance and fast switching times with 6.4ns turn-on and 37ns turn-off delay. This silicon metal-oxide semiconductor FET is RoHS compliant and lead-free.
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International Rectifier IRFU3910PBF technical specifications.
| Package/Case | TO-251 |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 115MR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 640pF |
| Lead Free | Lead Free |
| Lead Length | 9.65mm |
| Lead Pitch | 2.28mm |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Termination | Through Hole |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 6.4ns |
| DC Rated Voltage | 100V |
| Width | 2.39mm |
| RoHS | Compliant |
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