N-Channel Power MOSFET featuring 40V drain-source breakdown voltage and 119A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 5.5mΩ Rds On at a nominal 4V gate-source voltage. Designed for through-hole mounting in a TO-251-3 package, it boasts a maximum power dissipation of 140W and operates from -55°C to 175°C. Key switching characteristics include a 17ns turn-on delay and 36ns fall time.
PackageTO-251-3
Current Rating119A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFU4104PBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 119A |
| Current Rating | 119A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Dual Supply Voltage | 40V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.1mm |
| Input Capacitance | 2.95nF |
| Lead Free | Lead Free |
| Lead Length | 9.65mm |
| Lead Pitch | 2.28mm |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | Through Hole |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 40V |
| Width | 2.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFU4104PBF Datasheet
Download the complete datasheet for International Rectifier IRFU4104PBF to view detailed technical specifications.
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