N-Channel Power MOSFET featuring 40V drain-source breakdown voltage and 119A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 5.5mΩ Rds On at a nominal 4V gate-source voltage. Designed for through-hole mounting in a TO-251-3 package, it boasts a maximum power dissipation of 140W and operates from -55°C to 175°C. Key switching characteristics include a 17ns turn-on delay and 36ns fall time.
PackageTO-251-3
Current Rating119A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFU4104PBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
119A
Current Rating
119A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Dual Supply Voltage
40V
Fall Time
36ns
Gate to Source Voltage (Vgs)
20V
Height
6.1mm
Input Capacitance
2.95nF
Lead Free
Lead Free
Lead Length
9.65mm
Lead Pitch
2.28mm
Length
6.6mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
140W
Radiation Hardening
No
Rds On Max
5.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
Through Hole
Threshold Voltage
4V
Turn-Off Delay Time
37ns
Turn-On Delay Time
17ns
DC Rated Voltage
40V
Width
2.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFU4104PBF Datasheet
Download the complete datasheet for International Rectifier IRFU4104PBF to view detailed technical specifications.
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