N-channel power MOSFET featuring 200V drain-source breakdown voltage and 24A continuous drain current. Offers low on-resistance of 78mΩ at a nominal gate-source voltage of 5V. This through-hole component, housed in a TO-251 package, boasts a maximum power dissipation of 144W and operates across a wide temperature range of -55°C to 175°C. Key switching parameters include a 25nC gate charge, 13.4ns turn-on delay, and 14.8ns fall time.
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International Rectifier IRFU4620PBF technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 78mR |
| Drain to Source Voltage (Vdss) | 200V |
| Dual Supply Voltage | 200V |
| Fall Time | 14.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.71nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 144W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 144W |
| Radiation Hardening | No |
| Rds On Max | 78mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | Through Hole |
| Turn-Off Delay Time | 25.4ns |
| Turn-On Delay Time | 13.4ns |
| Width | 6.22mm |
| RoHS | Compliant |
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