P-channel power MOSFET featuring 55V drain-source voltage and -18A continuous drain current. Offers 110mΩ maximum drain-source on-resistance at a nominal gate-source voltage of -4V. Designed for through-hole mounting in a TO-251AA package, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C with a maximum power dissipation of 57W. Includes low turn-on (12ns) and turn-off (20ns) delay times.
PackageTO-251AA
Current Rating-18A
MountingThrough Hole
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Technical Specifications
International Rectifier IRFU5505PBF technical specifications.
General
| Package/Case | TO-251AA |
| Continuous Drain Current (ID) | -18A |
| Current Rating | -18A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 110mR |
| Dual Supply Voltage | -55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 650pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| On-State Resistance | 110R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | -55V |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFU5505PBF Datasheet
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