P-channel power MOSFET featuring 100V drain-source breakdown voltage and 6.6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 480mΩ drain-source on-resistance and operates within a -55°C to 150°C temperature range. Designed for through-hole mounting in a TO-251AA (IPAK-3) package, it boasts a maximum power dissipation of 40W and includes fast switching characteristics with turn-on and turn-off delay times of 14ns and 28ns respectively. This RoHS compliant component is ideal for power switching applications.
PackageTO-251-3
Current Rating-6.6A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
International Rectifier IRFU9120NPBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 6.6A |
| Current Rating | -6.6A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 480MR |
| Dual Supply Voltage | -100V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| On-State Resistance | 480R |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 39W |
| Radiation Hardening | No |
| Rds On Max | 480mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -100V |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFU9120NPBF Datasheet
Download the complete datasheet for International Rectifier IRFU9120NPBF to view detailed technical specifications.
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