International Rectifier
IRFZ24NLPBF
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
PackageTO-262
Current Rating17A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFZ24NLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
17A
Current Rating
17A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
370pF
Lead Free
Lead Free
Max Power Dissipation
3.8W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
45W
Rds On Max
70mR
RoHS Compliant
Yes
Series
HEXFET®
DC Rated Voltage
55V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFZ24NLPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ24NLPBF to view detailed technical specifications.
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