N-Channel Power MOSFET featuring 55V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.07 ohm drain-source on-resistance and a maximum power dissipation of 45W. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 4.9ns turn-on delay and 19ns turn-off delay.
PackageTO-220AB
Current Rating17A
MountingThrough Hole
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Technical Specifications
International Rectifier IRFZ24NPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
17A
Current Rating
17A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
70mR
Dual Supply Voltage
55V
Fall Time
27ns
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
370pF
Lead Free
Lead Free
Lead Pitch
2.54mm
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
19ns
Turn-On Delay Time
4.9ns
DC Rated Voltage
55V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFZ24NPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ24NPBF to view detailed technical specifications.
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