
N-Channel Power MOSFET featuring 55V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.07 ohm drain-source on-resistance and a maximum power dissipation of 45W. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 4.9ns turn-on delay and 19ns turn-off delay.
International Rectifier IRFZ24NPBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 70mR |
| Dual Supply Voltage | 55V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 370pF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 4.9ns |
| DC Rated Voltage | 55V |
| Width | 4.69mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFZ24NPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
