
N-Channel Power MOSFET, D2PAK package, featuring 55V drain-source breakdown voltage and 17A continuous drain current. Offers low 70mΩ on-state resistance for efficient power switching. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 45W. Includes fast switching characteristics with turn-on delay of 4.9ns and fall time of 27ns. Surface mountable and RoHS compliant.
International Rectifier IRFZ24NSPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| On-State Resistance | 70mR |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 4.9ns |
| Width | 10.16mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFZ24NSPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
