N-channel power MOSFET featuring 55V drain-source breakdown voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.07 ohm Rds On resistance and a maximum power dissipation of 45W. Designed for surface mounting in a D2PAK package, it operates across a wide temperature range of -55°C to 175°C with fast switching characteristics including a 4.9ns turn-on delay and 27ns fall time. Input capacitance is rated at 370pF, and the component is RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power45W
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Technical Specifications
International Rectifier IRFZ24NSTRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.703mm |
| Input Capacitance | 370pF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 4.9ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ24NSTRRPBF Datasheet
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