N-Channel Power MOSFET, featuring a 60V drain-source breakdown voltage and a maximum continuous drain current of 28A. This silicon, metal-oxide semiconductor FET offers a low drain-source on-resistance of 42mΩ at a 10V gate-source voltage. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 68W and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a turn-on delay time of 5.1ns and a fall time of 30ns.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power68W
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Technical Specifications
International Rectifier IRFZ34EPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 42mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 42mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 680pF |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Mount | Through Hole |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 68W |
| Rds On Max | 42mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 5.1ns |
| Width | 4.69mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ34EPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ34EPBF to view detailed technical specifications.
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