N-Channel Power MOSFET, featuring a 60V drain-source breakdown voltage and a maximum continuous drain current of 28A. This silicon, metal-oxide semiconductor FET offers a low drain-source on-resistance of 42mΩ at a 10V gate-source voltage. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 68W and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a turn-on delay time of 5.1ns and a fall time of 30ns.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power68W
Quick Jump:
Technical Specifications
International Rectifier IRFZ34EPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
28A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
42mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
42mR
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
680pF
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
68W
Mount
Through Hole
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
68W
Rds On Max
42mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
4V
Turn-Off Delay Time
22ns
Turn-On Delay Time
5.1ns
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFZ34EPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ34EPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
