N-Channel Power MOSFET, featuring a 60V drain-source breakdown voltage and a maximum continuous drain current of 28A. This silicon, metal-oxide semiconductor FET offers a low drain-source on-resistance of 42mΩ at a 10V gate-source voltage. Designed for through-hole mounting in a TO-220AB package, it boasts a maximum power dissipation of 68W and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a turn-on delay time of 5.1ns and a fall time of 30ns.
International Rectifier IRFZ34EPBF technical specifications.
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