Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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International Rectifier IRFZ34NPBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 29A |
| Current Rating | 29A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 40mR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 55V |
| RoHS | Compliant |
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