N-Channel Power MOSFET, D2PAK package, featuring 55V drain-source breakdown voltage and 29A continuous drain current. Offers a low 0.04 ohm maximum drain-source on-resistance. Operates with a nominal gate-source voltage of 4V and a maximum of 20V. This silicon, metal-oxide semiconductor FET boasts a maximum power dissipation of 68W and a wide operating temperature range from -55°C to 175°C. Designed for surface mounting with lead-free and RoHS compliant construction.
PackageD2PAK
Current Rating29A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFZ34NSPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 29A |
| Current Rating | 29A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 40mR |
| Dual Supply Voltage | 55V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 68W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 55V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ34NSPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ34NSPBF to view detailed technical specifications.
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