N-Channel Power MOSFET, D2PAK package, featuring 55V drain-source breakdown voltage and 29A continuous drain current. Offers a low 0.04 ohm maximum drain-source on-resistance. Operates with a nominal gate-source voltage of 4V and a maximum of 20V. This silicon, metal-oxide semiconductor FET boasts a maximum power dissipation of 68W and a wide operating temperature range from -55°C to 175°C. Designed for surface mounting with lead-free and RoHS compliant construction.
PackageD2PAK
Current Rating29A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFZ34NSPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
29A
Current Rating
29A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
40mR
Dual Supply Voltage
55V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
700pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
68W
Mount
Surface Mount
Nominal Vgs
4V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
68W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Termination
SMD/SMT
Turn-Off Delay Time
31ns
Turn-On Delay Time
7ns
DC Rated Voltage
55V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFZ34NSPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ34NSPBF to view detailed technical specifications.
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