International Rectifier
IRFZ46N
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
PackageTO-220AB
MountingThrough Hole
Power107W
Quick Jump:
Technical Specifications
International Rectifier IRFZ46N technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Resistance | 16.5mR |
| Element Configuration | Single |
| Fall Time | 57ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 1.696nF |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 107W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 14ns |
| Width | 4.69mm |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFZ46N Datasheet
Download the complete datasheet for International Rectifier IRFZ46N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.