N-channel power MOSFET featuring 55V drain-source breakdown voltage and 53A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 16.5mΩ maximum on-state resistance. Designed for surface mounting in a D2PAK package, it supports a maximum power dissipation of 120W and operates within a temperature range of -55°C to 175°C. Key switching parameters include a 14ns turn-on delay and 57ns fall time.
International Rectifier IRFZ46NSPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 53A |
| Current Rating | 53A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 16.5mR |
| Dual Supply Voltage | 55V |
| Fall Time | 57ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| On-State Resistance | 16.5mR |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 55V |
| RoHS | Compliant |
No datasheet is available for this part.
