N-Channel Power MOSFET, 55V Drain-Source Voltage, 51A Continuous Drain Current, and 13.6mΩ Rds On. Features include a 13ns turn-on delay, 37ns turn-off delay, and 39ns fall time. Operates from -55°C to 175°C with 82W maximum power dissipation. Packaged in TO-262, this through-hole mount component is RoHS compliant.
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power82W
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Technical Specifications
International Rectifier IRFZ46ZLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
51A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Fall Time
39ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
1.46nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
82W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
82W
Radiation Hardening
No
Rds On Max
13.6mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
37ns
Turn-On Delay Time
13ns
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFZ46ZLPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ46ZLPBF to view detailed technical specifications.
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