N-Channel Power MOSFET, 55V Drain-Source Voltage, 51A Continuous Drain Current, and 13.6mΩ Rds On. Features include a 13ns turn-on delay, 37ns turn-off delay, and 39ns fall time. Operates from -55°C to 175°C with 82W maximum power dissipation. Packaged in TO-262, this through-hole mount component is RoHS compliant.
PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power82W
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Technical Specifications
International Rectifier IRFZ46ZLPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 51A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 1.46nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 82W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 82W |
| Radiation Hardening | No |
| Rds On Max | 13.6mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 13ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFZ46ZLPBF Datasheet
Download the complete datasheet for International Rectifier IRFZ46ZLPBF to view detailed technical specifications.
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