N-Channel Power MOSFET, D2PAK package, featuring 55V drain-source voltage and 51A continuous drain current. Offers low 13.6mΩ on-resistance and 82W power dissipation. Operates from -55°C to 175°C with fast switching times, including 13ns turn-on delay and 39ns fall time. This surface-mount silicon FET is RoHS compliant.
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International Rectifier IRFZ46ZSPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 51A |
| Current Rating | 51A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 13.6MR |
| Dual Supply Voltage | 55V |
| Fall Time | 39ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.46nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 82W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| On-State Resistance | 13.6mR |
| Packaging | Rail/Tube |
| Power Dissipation | 82W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 55V |
| Width | 9.65mm |
| RoHS | Compliant |
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