IRFZ48VSPBF

N-Channel Power MOSFET, 60V Drain-Source Voltage, 72A Continuous Drain Current, and 0.012 Ohm On-Resistance. This silicon, metal-oxide semiconductor FET features a D2PAK package for surface mounting, with a maximum power dissipation of 150W and an operating temperature range of -55°C to 175°C. Key electrical characteristics include a 4V threshold voltage, 1.985nF input capacitance, and fast switching times with a 7.6ns turn-on delay and 166ns fall time. RoHS and Lead Free compliant.