N-Channel Power MOSFET, 60V Drain-Source Voltage, 72A Continuous Drain Current, and 0.012 Ohm On-Resistance. This silicon, metal-oxide semiconductor FET features a D2PAK package for surface mounting, with a maximum power dissipation of 150W and an operating temperature range of -55°C to 175°C. Key electrical characteristics include a 4V threshold voltage, 1.985nF input capacitance, and fast switching times with a 7.6ns turn-on delay and 166ns fall time. RoHS and Lead Free compliant.
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International Rectifier IRFZ48VSPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 72A |
| Current Rating | 72A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 166ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.985nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 157ns |
| Turn-On Delay Time | 7.6ns |
| DC Rated Voltage | 60V |
| Width | 9.65mm |
| RoHS | Compliant |
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