N-channel Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting in a TO-220AB package. Features a 600V collector-emitter breakdown voltage and a 9A continuous collector current rating. Offers a maximum collector-emitter saturation voltage of 2.39V and a maximum power dissipation of 38W. Operates across a temperature range of -55°C to 150°C. This RoHS compliant component includes lead-free packaging.
PackageTO-220AB
Current Rating9A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4BC10KDPBF technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.39V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.62V
Current Rating
9A
Height
8.77mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.54mm
Max Collector Current
9A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
38W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
100ns
Turn-On Delay Time
46ns
DC Rated Voltage
600V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4BC10KDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC10KDPBF to view detailed technical specifications.
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