N-Channel Insulated Gate Bipolar Transistor (IGBT) for surface mount applications. Features a 600V Collector Emitter Breakdown Voltage and a 14A Max Collector Current. Offers a 1.8V Collector Emitter Saturation Voltage and 38W Power Dissipation. Packaged in a D2PAK with lead-free construction and RoHS compliance. Operating temperature range from -55°C to 150°C.
PackageD2PAK
Current Rating14A
MountingSurface Mount
Power38W
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Technical Specifications
International Rectifier IRG4BC10SD-SPBF technical specifications.
General
| Package/Case | D2PAK |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.8V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.8V |
| Current Rating | 14A |
| Height | 4.83mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 14A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 38W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 28ns |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG4BC10SD-SPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC10SD-SPBF to view detailed technical specifications.
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