N-Channel Insulated Gate Bipolar Transistor (IGBT) for surface mount applications. Features a 600V Collector Emitter Breakdown Voltage and a 14A Max Collector Current. Offers a 1.8V Collector Emitter Saturation Voltage and 38W Power Dissipation. Packaged in a D2PAK with lead-free construction and RoHS compliance. Operating temperature range from -55°C to 150°C.
PackageD2PAK
Current Rating14A
MountingSurface Mount
Power38W
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Technical Specifications
International Rectifier IRG4BC10SD-SPBF technical specifications.
General
Package/Case
D2PAK
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
1.8V
Current Rating
14A
Height
4.83mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.67mm
Max Collector Current
14A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
38W
Mount
Surface Mount
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
38W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
28ns
RoHS Compliant
Yes
DC Rated Voltage
600V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4BC10SD-SPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC10SD-SPBF to view detailed technical specifications.
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