N-Channel Insulated Gate Bipolar Transistor (IGBT) for surface mount applications. Features a 600V Collector Emitter Breakdown Voltage and a 16A continuous collector current rating. Offers a low 2.27V Collector Emitter Saturation Voltage and 60W maximum power dissipation. Packaged in a D2PAK with lead-free and RoHS compliant construction. Ideal for power switching applications requiring high voltage and current handling.
PackageD2PAK
Current Rating16A
MountingSurface Mount
Power60W
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Technical Specifications
International Rectifier IRG4BC20KD-SPBF technical specifications.
General
Package/Case
D2PAK
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.27V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.8V
Current Rating
16A
Forward Current
7A
Height
4.83mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.67mm
Max Collector Current
16A
Max Forward Surge Current (Ifsm)
32A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Surface Mount
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
60W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
37ns
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
180ns
Turn-On Delay Time
54ns
DC Rated Voltage
600V
Weight
0.002kg
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4BC20KD-SPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC20KD-SPBF to view detailed technical specifications.
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