N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and 16A continuous collector current. Features a low 2.8V Collector Emitter Saturation Voltage and 37ns reverse recovery time. Packaged in a TO-220AB through-hole mount, this lead-free component offers a maximum power dissipation of 60W and operates from -55°C to 150°C. Ideal for power switching applications.
PackageTO-220AB
Current Rating16A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4BC20KDPBF technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.8V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.8V
Current Rating
16A
Height
8.77mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.54mm
Max Collector Current
16A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
37ns
RoHS Compliant
Yes
Turn-Off Delay Time
180ns
Turn-On Delay Time
54ns
DC Rated Voltage
600V
Weight
0.211644oz
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4BC20KDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC20KDPBF to view detailed technical specifications.
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