N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and 16A continuous collector current. Features a low 2.8V Collector Emitter Saturation Voltage and 37ns reverse recovery time. Packaged in a TO-220AB through-hole mount, this lead-free component offers a maximum power dissipation of 60W and operates from -55°C to 150°C. Ideal for power switching applications.
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International Rectifier IRG4BC20KDPBF technical specifications.
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.8V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.8V |
| Current Rating | 16A |
| Height | 8.77mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Collector Current | 16A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 37ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 180ns |
| Turn-On Delay Time | 54ns |
| DC Rated Voltage | 600V |
| Weight | 0.211644oz |
| Width | 4.69mm |
| RoHS | Compliant |
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