N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V collector-emitter breakdown voltage and a 13A continuous collector current. This device offers a low 2.1V collector-emitter saturation voltage and a 60W power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates across a temperature range of -55°C to 150°C. Key switching characteristics include a 39ns turn-on delay and a 93ns turn-off delay, with a 37ns reverse recovery time. This RoHS compliant component is lead-free.
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International Rectifier IRG4BC20UDPBF technical specifications.
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.1V |
| Current Rating | 13A |
| Height | 8.77mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Collector Current | 13A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 37ns |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 93ns |
| Turn-On Delay Time | 39ns |
| DC Rated Voltage | 600V |
| Width | 4.69mm |
| RoHS | Compliant |
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