N-Channel Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting. Features a 600V Collector Emitter Breakdown Voltage and 13A continuous collector current. Offers a low 2.1V Collector Emitter Saturation Voltage and 60W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-220AB case, this RoHS compliant component is supplied in rail/tube packaging.
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International Rectifier IRG4BC20UPBF technical specifications.
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.1V |
| Current Rating | 13A |
| Height | 8.77mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Collector Current | 13A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 86ns |
| Turn-On Delay Time | 21ns |
| DC Rated Voltage | 600V |
| Width | 4.69mm |
| RoHS | Compliant |
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