N-Channel Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting. Features a 600V Collector Emitter Breakdown Voltage and 13A continuous collector current. Offers a low 2.1V Collector Emitter Saturation Voltage and 60W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-220AB case, this RoHS compliant component is supplied in rail/tube packaging.
PackageTO-220AB
Current Rating13A
MountingThrough Hole
Power60W
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Technical Specifications
International Rectifier IRG4BC20UPBF technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.1V
Current Rating
13A
Height
8.77mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.54mm
Max Collector Current
13A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
60W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
86ns
Turn-On Delay Time
21ns
DC Rated Voltage
600V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4BC20UPBF Datasheet
Download the complete datasheet for International Rectifier IRG4BC20UPBF to view detailed technical specifications.
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