Single Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting in a TO-262 package. Features a 1.2kV Collector-Emitter Breakdown Voltage and a 1.2kV DC Rated Voltage. Offers a maximum collector current of 11A with a low collector-emitter saturation voltage. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 60W. Turn-on delay is 23ns and turn-off delay is 93ns. RoHS compliant and lead-free.
International Rectifier IRG4BH20K-LPBF technical specifications.
| Package/Case | TO-262 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 4.3V |
| Current Rating | 11A |
| Height | 9.65mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Collector Current | 11A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 93ns |
| Turn-On Delay Time | 23ns |
| DC Rated Voltage | 1.2kV |
| Width | 4.83mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRG4BH20K-LPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.