The IRG4IBC20FDPBF is a 600V insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a collector-emitter saturation voltage of 2V. It has a maximum collector current rating of 14.3A and a maximum power dissipation of 34W. The transistor is packaged in a TO-220-3 package and is designed for through-hole mounting. It operates over a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-220-3
Current Rating14.3A
MountingThrough Hole
Power34W
Quick Jump:
Technical Specifications
International Rectifier IRG4IBC20FDPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | 14.3A |
| Height | 16.13mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.75mm |
| Max Collector Current | 14.3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 34W |
| Radiation Hardening | No |
| Reverse Recovery Time | 37ns |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG4IBC20FDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4IBC20FDPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.