N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector-Emitter Breakdown Voltage and a 17A Max Collector Current. This through-hole mounted component offers a 2.1V Collector-Emitter Saturation Voltage and 45W Power Dissipation. Packaged in a TO-220-3 configuration, it operates from -55°C to 150°C and is RoHS compliant.
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International Rectifier IRG4IBC30WPBF technical specifications.
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Current Rating | 17A |
| Height | 16.12mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Collector Current | 17A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 99ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 600V |
| Width | 4.83mm |
| RoHS | Compliant |
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