N-Channel Insulated Gate Bipolar Transistor (IGBT) for high-power switching applications. Features a 600V Collector Emitter Breakdown Voltage and a 23A continuous Collector Current rating. Offers a low 2.52V Collector Emitter Saturation Voltage and 100W maximum power dissipation. Housed in a TO-247AC through-hole plastic package, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-247AC
Current Rating23A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PC30UDPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.52V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.1V
Current Rating
23A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
23A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Reach SVHC Compliant
No
Reverse Recovery Time
42ns
RoHS Compliant
Yes
Turn-Off Delay Time
91ns
Turn-On Delay Time
40ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PC30UDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC30UDPBF to view detailed technical specifications.
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