N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector-Emitter Breakdown Voltage and a 23A Max Collector Current. This through-hole component offers a low 2.7V Collector-Emitter Saturation Voltage and a maximum power dissipation of 100W. Designed for demanding applications, it operates across a wide temperature range from -55°C to 150°C and is housed in a TO-247AC package. RoHS compliant and lead-free.
PackageTO-247AC
Current Rating23A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PC30WPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.7V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.7V
Current Rating
23A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
23A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Through Hole
Package Quantity
25
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
DC Rated Voltage
600V
Weight
1.340411oz
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PC30WPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC30WPBF to view detailed technical specifications.
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