N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector-Emitter Breakdown Voltage and a 23A Max Collector Current. This through-hole component offers a low 2.7V Collector-Emitter Saturation Voltage and a maximum power dissipation of 100W. Designed for demanding applications, it operates across a wide temperature range from -55°C to 150°C and is housed in a TO-247AC package. RoHS compliant and lead-free.
PackageTO-247AC
Current Rating23A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PC30WPBF technical specifications.
General
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Current Rating | 23A |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 23A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| DC Rated Voltage | 600V |
| Weight | 1.340411oz |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG4PC30WPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC30WPBF to view detailed technical specifications.
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