N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. Features a 600V Collector-Emitter Breakdown Voltage and a continuous Collector Current rating of 49A. This device offers a low Collector-Emitter Saturation Voltage of 1.85V and a maximum power dissipation of 160W. Packaged in a TO-247AC through-hole mount, it operates within a temperature range of -55°C to 150°C and is RoHS compliant with a lead-free package.
PackageTO-247AC
Current Rating49A
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier IRG4PC40FDPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.85V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
1.7V
Current Rating
49A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
49A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
42ns
RoHS Compliant
Yes
Turn-Off Delay Time
230ns
Turn-On Delay Time
63ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PC40FDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC40FDPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
