N-channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 42A continuous collector current. Features a low 2.6V Collector-Emitter Saturation Voltage and 160W maximum power dissipation. Packaged in a TO-247AC through-hole mount, this RoHS compliant component offers a maximum operating temperature of 150°C. Includes a 42ns reverse recovery time and 53ns turn-on delay.
PackageTO-247AC
Current Rating42A
MountingThrough Hole
Power160W
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Technical Specifications
International Rectifier IRG4PC40KDPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.6V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.6V
Current Rating
42A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
42A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Power Dissipation
160W
Reach SVHC Compliant
No
Reverse Recovery Time
42ns
RoHS Compliant
Yes
Turn-Off Delay Time
110ns
Turn-On Delay Time
53ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PC40KDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC40KDPBF to view detailed technical specifications.
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