N-channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 42A continuous collector current. Features a low 2.6V Collector-Emitter Saturation Voltage and 160W maximum power dissipation. Packaged in a TO-247AC through-hole mount, this RoHS compliant component offers a maximum operating temperature of 150°C. Includes a 42ns reverse recovery time and 53ns turn-on delay.
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International Rectifier IRG4PC40KDPBF technical specifications.
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.6V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.6V |
| Current Rating | 42A |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 42A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 160W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 42ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 53ns |
| DC Rated Voltage | 600V |
| Width | 5.3mm |
| RoHS | Compliant |
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