N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and 40A Max Collector Current. Features a 2.15V Collector Emitter Saturation Voltage and 160W Max Power Dissipation. Packaged in a TO-247AD with through-hole mounting. RoHS compliant with a 42ns reverse recovery time.
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International Rectifier IRG4PC40UD-EPBF technical specifications.
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.15V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.1V |
| Current Rating | 40A |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 42ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 54ns |
| DC Rated Voltage | 600V |
| Width | 5.3mm |
| RoHS | Compliant |
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