N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector Emitter Breakdown Voltage and 40A Max Collector Current. Features a 2.15V Collector Emitter Saturation Voltage and 160W Max Power Dissipation. Packaged in a TO-247AD with through-hole mounting. RoHS compliant with a 42ns reverse recovery time.
PackageTO-247AC
Current Rating40A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PC40UD-EPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.15V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.1V
Current Rating
40A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
40A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
42ns
RoHS Compliant
Yes
Turn-Off Delay Time
110ns
Turn-On Delay Time
54ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PC40UD-EPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC40UD-EPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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