N-Channel Insulated Gate Bipolar Transistor (IGBT) for high-power switching applications. Features a 600V Collector Emitter Breakdown Voltage and a 40A continuous collector current rating. Offers a low 2.15V Collector Emitter Saturation Voltage and a maximum power dissipation of 160W. Packaged in a TO-247AC through-hole mount with a lead-free construction. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-247AC
Current Rating40A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PC40UDPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.15V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.1V
Current Rating
40A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
40A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Reach SVHC Compliant
Unknown
Reverse Recovery Time
42ns
RoHS Compliant
Yes
Turn-Off Delay Time
110ns
Turn-On Delay Time
54ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PC40UDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PC40UDPBF to view detailed technical specifications.
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