
N-Channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 600V Collector Emitter Breakdown Voltage and a 40A Max Collector Current. This through-hole component offers a low 2.1V Collector Emitter Saturation Voltage and a 160W Max Power Dissipation. Operating temperature range spans from -55°C to 150°C. Packaged in TO-247AC, this RoHS compliant device has a turn-on delay of 34ns and turn-off delay of 110ns.
International Rectifier IRG4PC40UPBF technical specifications.
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.1V |
| Current Rating | 40A |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 34ns |
| DC Rated Voltage | 600V |
| Weight | 1.340411oz |
| Width | 5.3mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRG4PC40UPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
