N-channel Insulated Gate Bipolar Transistor (IGBT) with a 1.2kV Collector-Emitter Breakdown Voltage and 41A continuous collector current. Features a low 2.43V Collector-Emitter Saturation Voltage and 160W maximum power dissipation. Packaged in a TO-247AC through-hole plastic package, this RoHS compliant component operates from -55°C to 150°C. Turn-on delay is 46ns with a turn-off delay of 150ns.
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International Rectifier IRG4PH40UDPBF technical specifications.
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.43V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.1V |
| Current Rating | 41A |
| Height | 20.7mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Collector Current | 41A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 63ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 46ns |
| DC Rated Voltage | 1.2kV |
| Width | 5.31mm |
| RoHS | Compliant |
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