N-channel Insulated Gate Bipolar Transistor (IGBT) with a 1.2kV Collector-Emitter Breakdown Voltage and 41A continuous collector current. Features a low 2.43V Collector-Emitter Saturation Voltage and 160W maximum power dissipation. Packaged in a TO-247AC through-hole plastic package, this RoHS compliant component operates from -55°C to 150°C. Turn-on delay is 46ns with a turn-off delay of 150ns.
PackageTO-247AC
Current Rating41A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PH40UDPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.43V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
3.1V
Current Rating
41A
Height
20.7mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.87mm
Max Collector Current
41A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Reach SVHC Compliant
No
Reverse Recovery Time
63ns
RoHS Compliant
Yes
Turn-Off Delay Time
150ns
Turn-On Delay Time
46ns
DC Rated Voltage
1.2kV
Width
5.31mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PH40UDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PH40UDPBF to view detailed technical specifications.
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