N-Channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 1200V Collector-Emitter Breakdown Voltage (V(BR)CES) and a continuous Collector Current (I(C)) rating of 45A. This IGBT offers a maximum Collector-Emitter Saturation Voltage of 2.77V and a maximum power dissipation of 200W. Packaged in a TO-247AC through-hole plastic package, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-247AC
Current Rating45A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PH50KDPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.77V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
3.5V
Current Rating
45A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
45A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Reach SVHC Compliant
No
Reverse Recovery Time
90ns
RoHS Compliant
Yes
Turn-Off Delay Time
140ns
Turn-On Delay Time
87ns
DC Rated Voltage
1.2kV
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PH50KDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PH50KDPBF to view detailed technical specifications.
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