The IRG4PH50SPBF is a 1.2kV insulated gate bipolar transistor with a collector emitter breakdown voltage of 1.2kV and a maximum collector current of 57A. It has a maximum power dissipation of 200W and operates over a temperature range of -55°C to 150°C. The device is packaged in a TO-247AC lead free plastic package and is suitable for through hole mounting. The IRG4PH50SPBF is RoHS compliant and does not contain any radiation hardening features.
PackageTO-247AC
Current Rating57A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PH50SPBF technical specifications.
General
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.47V |
| Current Rating | 57A |
| Height | 20.3mm |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 57A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 845ns |
| Turn-On Delay Time | 32ns |
| DC Rated Voltage | 1.2kV |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG4PH50SPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PH50SPBF to view detailed technical specifications.
No datasheet is available for this part.