N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1200V Collector-Emitter Breakdown Voltage and a 45A continuous Current Rating. This through-hole component offers a maximum Collector-Emitter Saturation Voltage of 3.7V and a Power Dissipation of 200W. Packaged in a TO-247AC plastic housing, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-247AC
Current Rating45A
MountingThrough Hole
Power200W
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Technical Specifications
International Rectifier IRG4PH50UDPBF technical specifications.
General
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 3.7V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 3.7V |
| Current Rating | 45A |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 45A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 90ns |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 47ns |
| DC Rated Voltage | 1.2kV |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRG4PH50UDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PH50UDPBF to view detailed technical specifications.
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