N-Channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 1200V Collector-Emitter Breakdown Voltage (V(BR)CES) and a continuous Collector Current (I(C)) of 45A. This through-hole mounted component offers a maximum power dissipation of 200W and a low Collector-Emitter Saturation Voltage of 3.7V. Packaged in TO-247AC, it operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageTO-247AC
Current Rating45A
MountingThrough Hole
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Technical Specifications
International Rectifier IRG4PH50UPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
3.7V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
3.7V
Current Rating
45A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
45A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
200ns
Turn-On Delay Time
35ns
DC Rated Voltage
1.2kV
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PH50UPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PH50UPBF to view detailed technical specifications.
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