N-Channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 600V Collector-Emitter Breakdown Voltage and a 85A Max Collector Current. This component offers a 1.83V Collector-Emitter Saturation Voltage and 350W Power Dissipation. Packaged in a TO-274AA (SUPER-247) through-hole mount with lead-free construction. Operating temperature range from -55°C to 150°C.
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| Package/Case | TO-274-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.83V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.3V |
| Current Rating | 85A |
| Height | 20.8mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.1mm |
| Max Collector Current | 85A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 350W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 82ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 282ns |
| Turn-On Delay Time | 82ns |
| DC Rated Voltage | 600V |
| Width | 5.3mm |
| RoHS | Compliant |
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