N-Channel Insulated Gate Bipolar Transistor (IGBT) for high-power applications. Features a 600V Collector-Emitter Breakdown Voltage and a 85A Max Collector Current. This component offers a 1.83V Collector-Emitter Saturation Voltage and 350W Power Dissipation. Packaged in a TO-274AA (SUPER-247) through-hole mount with lead-free construction. Operating temperature range from -55°C to 150°C.
PackageTO-274-3
Current Rating85A
MountingThrough Hole
Power350W
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Technical Specifications
International Rectifier IRG4PSC71KDPBF technical specifications.
General
Package/Case
TO-274-3
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.83V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.3V
Current Rating
85A
Height
20.8mm
Input Type
STANDARD
Lead Free
Lead Free
Length
16.1mm
Max Collector Current
85A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Power Dissipation
350W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
82ns
RoHS Compliant
Yes
Turn-Off Delay Time
282ns
Turn-On Delay Time
82ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PSC71KDPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PSC71KDPBF to view detailed technical specifications.
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