International Rectifier
IRG4PSH71UPBF
Insulated Gate Bipolar Transistor, 99A I(C), 1200V V(BR)CES, N-Channel, SUPER-247, 3 PIN
MountingThrough Hole
Power350W
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Technical Specifications
International Rectifier IRG4PSH71UPBF technical specifications.
General
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.7V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
2.7V
Input Type
STANDARD
Max Collector Current
99A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Power Dissipation
350W
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRG4PSH71UPBF Datasheet
Download the complete datasheet for International Rectifier IRG4PSH71UPBF to view detailed technical specifications.
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