The IRG4PSH71UPBF is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 99A. It has a maximum power dissipation of 350W and operates within a temperature range of -55°C to 150°C. The device is packaged in a through-hole configuration and is compliant with RoHS regulations.
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International Rectifier IRG4PSH71UPBF technical specifications.
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.7V |
| Input Type | STANDARD |
| Max Collector Current | 99A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 350W |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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