N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a 40A Max Collector Current. This through-hole component is housed in a TO-220AB package, offering a Max Power Dissipation of 215W. It operates within a temperature range of -55°C to 150°C and includes a 2.05V Collector Emitter Saturation Voltage. The device is RoHS compliant and lead-free.
PackageTO-220AB
Current Rating40A
MountingThrough Hole
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Technical Specifications
International Rectifier IRGB20B60PD1PBF technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.05V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.8V
Current Rating
40A
Height
8.77mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.54mm
Max Collector Current
40A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
215W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
28ns
RoHS Compliant
Yes
Turn-Off Delay Time
115ns
Turn-On Delay Time
20ns
DC Rated Voltage
600V
Weight
0.211644oz
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRGB20B60PD1PBF Datasheet
Download the complete datasheet for International Rectifier IRGB20B60PD1PBF to view detailed technical specifications.
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