N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and a 40A Max Collector Current. This through-hole component is housed in a TO-220AB package, offering a Max Power Dissipation of 215W. It operates within a temperature range of -55°C to 150°C and includes a 2.05V Collector Emitter Saturation Voltage. The device is RoHS compliant and lead-free.
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| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.05V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.8V |
| Current Rating | 40A |
| Height | 8.77mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.54mm |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 215W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 28ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 115ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 600V |
| Weight | 0.211644oz |
| Width | 4.69mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRGB20B60PD1PBF to view detailed technical specifications.
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