N-channel Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting. Features a 600V Collector Emitter Breakdown Voltage and a maximum collector current of 8A. Offers a low Collector Emitter Saturation Voltage of 2.05V and a power dissipation of 56W. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220AB, lead-free package.
PackageTO-220AB
MountingThrough Hole
Power56W
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Technical Specifications
International Rectifier IRGB4059DPBF technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.05V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.05V
Height
9.02mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.66mm
Max Collector Current
8A
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
56W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
56W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
55ns
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
65ns
Turn-On Delay Time
25ns
Weight
0.211644oz
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRGB4059DPBF Datasheet
Download the complete datasheet for International Rectifier IRGB4059DPBF to view detailed technical specifications.
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