N-channel Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting. Features a 600V Collector Emitter Breakdown Voltage and a maximum collector current of 8A. Offers a low Collector Emitter Saturation Voltage of 2.05V and a power dissipation of 56W. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220AB, lead-free package.
PackageTO-220AB
MountingThrough Hole
Power56W
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Technical Specifications
International Rectifier IRGB4059DPBF technical specifications.
General
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.05V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.05V |
| Height | 9.02mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Collector Current | 8A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 56W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 55ns |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.211644oz |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRGB4059DPBF Datasheet
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