Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 20A Max Collector Current. This through-hole mounted component offers a 1.91V Collector Emitter Saturation Voltage and 101W Max Power Dissipation. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching characteristics with a 27ns turn-on delay and 79ns turn-off delay. The TO-220AB package ensures robust thermal performance and is RoHS compliant.
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International Rectifier IRGB4064DPBF technical specifications.
| Package/Case | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.91V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.91V |
| Height | 9.02mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Collector Current | 20A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 101W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 101W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 62ns |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 79ns |
| Turn-On Delay Time | 27ns |
| Weight | 0.211644oz |
| Width | 4.82mm |
| RoHS | Compliant |
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