Insulated Gate Bipolar Transistor (IGBT) featuring a 600V Collector Emitter Breakdown Voltage and 20A Max Collector Current. This through-hole mounted component offers a 1.91V Collector Emitter Saturation Voltage and 101W Max Power Dissipation. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching characteristics with a 27ns turn-on delay and 79ns turn-off delay. The TO-220AB package ensures robust thermal performance and is RoHS compliant.
PackageTO-220AB
MountingThrough Hole
Power101W
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Technical Specifications
International Rectifier IRGB4064DPBF technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.91V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
1.91V
Height
9.02mm
Input Type
STANDARD
Lead Free
Lead Free
Length
10.66mm
Max Collector Current
20A
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
101W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
101W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
62ns
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
79ns
Turn-On Delay Time
27ns
Weight
0.211644oz
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRGB4064DPBF Datasheet
Download the complete datasheet for International Rectifier IRGB4064DPBF to view detailed technical specifications.
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