The IRGIB10B60KD1P is a 600V insulated gate bipolar transistor with a maximum collector current of 16A and a maximum power dissipation of 44W. It is packaged in a TO-220-3 flange mount package and is suitable for through hole mounting. The transistor has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It is not radiation hardened and is not RoHS compliant.
PackageTO-220-3
Current Rating16A
MountingThrough Hole
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Technical Specifications
International Rectifier IRGIB10B60KD1P technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.1V |
| Current Rating | 16A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 16A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 44W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 79ns |
| RoHS Compliant | No |
| DC Rated Voltage | 600V |
| Weight | 0.08113oz |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRGIB10B60KD1P Datasheet
Download the complete datasheet for International Rectifier IRGIB10B60KD1P to view detailed technical specifications.
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