N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 60A continuous collector current. Features a low 2.15V Collector-Emitter Saturation Voltage and 308W maximum power dissipation. Packaged in a TO-247AC plastic package with through-hole mounting. Offers fast switching speeds with a 26ns turn-on delay and 110ns turn-off delay. RoHS compliant and lead-free.
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International Rectifier IRGP35B60PDPBF technical specifications.
| Package/Case | TO-247AC |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.15V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.55V |
| Current Rating | 60A |
| Height | 20.3mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 308W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Bulk |
| Power Dissipation | 308W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 42ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 26ns |
| DC Rated Voltage | 600V |
| Width | 5.3mm |
| RoHS | Compliant |
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