N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 600V Collector-Emitter Breakdown Voltage and 60A continuous collector current. Features a low 2.15V Collector-Emitter Saturation Voltage and 308W maximum power dissipation. Packaged in a TO-247AC plastic package with through-hole mounting. Offers fast switching speeds with a 26ns turn-on delay and 110ns turn-off delay. RoHS compliant and lead-free.
PackageTO-247AC
Current Rating60A
MountingThrough Hole
Power308W
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Technical Specifications
International Rectifier IRGP35B60PDPBF technical specifications.
General
Package/Case
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.15V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.55V
Current Rating
60A
Height
20.3mm
Input Type
STANDARD
Lead Free
Lead Free
Length
15.9mm
Max Collector Current
60A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
308W
Mount
Through Hole
Package Quantity
25
Packaging
Bulk
Power Dissipation
308W
Radiation Hardening
No
Reach SVHC Compliant
No
Reverse Recovery Time
42ns
RoHS Compliant
Yes
Turn-Off Delay Time
110ns
Turn-On Delay Time
26ns
DC Rated Voltage
600V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRGP35B60PDPBF Datasheet
Download the complete datasheet for International Rectifier IRGP35B60PDPBF to view detailed technical specifications.
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